Susceptibility of trapped-ion qubits to low-dose radiation sources

We experimentally study the real-time susceptibility of trapped-ion quantum systems to small doses ionizing radiation. expose an ion-trap apparatus a variety $\alpha$, $\beta$, and $\gamma$ sources measure resulting changes in qubit lifetimes, coherence times, gate fidelities, motional heating rates. found no quantifiable degradation ion trap performance presence low-dose radiation for any measurements performed. This finding is encouraging long-term prospects using ion-based information extreme environments, indicating that much larger may be required induce errors processors.